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Nondestructive determination of free-electron concentration and mobility in Hg1-xCdxTe, n-type InSb, and n-type GaAs

Identifieur interne : 01D880 ( Main/Repository ); précédent : 01D879; suivant : 01D881

Nondestructive determination of free-electron concentration and mobility in Hg1-xCdxTe, n-type InSb, and n-type GaAs

Auteurs : RBID : Pascal:94-0296670

Descripteurs français

Pascal (Inist)
- Méthode mesure, 8170D, 0755, 0760, 6172S, Matériau semiconducteur, Essai non destructif, Mobilité électron, Concentration, Mercure tellurure, Cadmium tellurure, Indium antimoniure, Gallium arséniure, Effet Faraday, Absorption, Rayonnement laser.

English descriptors

KwdEn :
- Absorption, Cadmium tellurides, Concentration, Electron mobility, Faraday effect, Gallium arsenides, Indium antimonides, Laser radiation, Measuring methods, Mercury tellurides, Nondestructive testing, Semiconductor materials.

Abstract

A method for nondestructive determination of free-electron concentration and mobility using Faraday rotation and absorption at mid-infrared wavelengths is presented. Faraday rotation measurements were made at four CO₂ laser wavelengths between 9 and 11 μm. The component due to free electrons was extracted using its wavelength dependence. Concentration N was determined for N>10¹⁴ cm^-3 from calibration plots exploiting Faraday rotation's linear dependence on free electron concentration. Electron rotation was combined with absorption due to electrons to determine their mobility. These mobilities agreed reasonably well with Hall test mobilities in materials where electron absorption could be determined separately from hole absorption. In materials where hole and electron absorption cannot be determined separately, a reference mobility was calculated using an electron absorption cross section. Samples tested were Hg_1-xCd_xTe for 0.20≤x≤0.30, n-type and intrinsic InSb, and n-type GaAs at room temperature.

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Pascal:94-0296670

Le document en format XML

<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Nondestructive determination of free-electron concentration and mobility in Hg<sub>1-x</sub>
Cd<sub>x</sub>
Te, n-type InSb, and n-type GaAs</title>
<author><name sortKey="Clarke, Frederick W" uniqKey="Clarke F">Frederick W. Clarke</name>
<affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Weapons Sciences Directorate, AMSMI-RD-WS-CM, Research, Development, and Engineering Center, U.S. Army Missile Command, Redstone Arsenal, Alabama 35898-5248</s1>
<sZ>1 aut.</sZ>
</inist:fA14>
<country xml:lang="fr">États-Unis</country>
<placeName><region type="state">Alabama</region>
</placeName>
<wicri:cityArea>Weapons Sciences Directorate, AMSMI-RD-WS-CM, Research, Development, and Engineering Center, U.S. Army Missile Command, Redstone Arsenal</wicri:cityArea>
</affiliation>
</author>
</titleStmt>
<publicationStmt><idno type="inist">94-0296670</idno>
<date when="1994-05-01">1994-05-01</date>
<idno type="stanalyst">PASCAL 94-0296670 AIP</idno>
<idno type="RBID">Pascal:94-0296670</idno>
<idno type="wicri:Area/Main/Corpus">01EC98</idno>
<idno type="wicri:Area/Main/Repository">01D880</idno>
</publicationStmt>
<seriesStmt><idno type="ISSN">0021-8979</idno>
<title level="j" type="abbreviated">J. Appl. Phys.</title>
<title level="j" type="main">Journal of Applied Physics</title>
</seriesStmt>
</fileDesc>
<profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Absorption</term>
<term>Cadmium tellurides</term>
<term>Concentration</term>
<term>Electron mobility</term>
<term>Faraday effect</term>
<term>Gallium arsenides</term>
<term>Indium antimonides</term>
<term>Laser radiation</term>
<term>Measuring methods</term>
<term>Mercury tellurides</term>
<term>Nondestructive testing</term>
<term>Semiconductor materials</term>
</keywords>
<keywords scheme="Pascal" xml:lang="fr"><term>Méthode mesure</term>
<term>8170D</term>
<term>0755</term>
<term>0760</term>
<term>6172S</term>
<term>Matériau semiconducteur</term>
<term>Essai non destructif</term>
<term>Mobilité électron</term>
<term>Concentration</term>
<term>Mercure tellurure</term>
<term>Cadmium tellurure</term>
<term>Indium antimoniure</term>
<term>Gallium arséniure</term>
<term>Effet Faraday</term>
<term>Absorption</term>
<term>Rayonnement laser</term>
</keywords>
</textClass>
</profileDesc>
</teiHeader>
<front><div type="abstract" xml:lang="en">A method for nondestructive determination of free-electron concentration and mobility using Faraday rotation and absorption at mid-infrared wavelengths is presented. Faraday rotation measurements were made at four CO<sub>2</sub>
 laser wavelengths between 9 and 11 μm. The component due to free electrons was extracted using its wavelength dependence. Concentration N was determined for N>10<sup>14</sup>
 cm<sup>-3</sup>
 from calibration plots exploiting Faraday rotation's linear dependence on free electron concentration. Electron rotation was combined with absorption due to electrons to determine their mobility. These mobilities agreed reasonably well with Hall test mobilities in materials where electron absorption could be determined separately from hole absorption. In materials where hole and electron absorption cannot be determined separately, a reference mobility was calculated using an electron absorption cross section. Samples tested were Hg<sub>1-x</sub>
Cd<sub>x</sub>
Te for 0.20≤x≤0.30, n-type and intrinsic InSb, and n-type GaAs at room temperature.</div>
</front>
</TEI>
<inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0021-8979</s0>
</fA01>
<fA02 i1="01"><s0>JAPIAU</s0>
</fA02>
<fA03 i2="1"><s0>J. Appl. Phys.</s0>
</fA03>
<fA05><s2>75</s2>
</fA05>
<fA06><s2>9</s2>
</fA06>
<fA08 i1="01" i2="1" l="ENG"><s1>Nondestructive determination of free-electron concentration and mobility in Hg<sub>1-x</sub>
Cd<sub>x</sub>
Te, n-type InSb, and n-type GaAs</s1>
</fA08>
<fA11 i1="01" i2="1"><s1>CLARKE (Frederick W.)</s1>
</fA11>
<fA14 i1="01"><s1>Weapons Sciences Directorate, AMSMI-RD-WS-CM, Research, Development, and Engineering Center, U.S. Army Missile Command, Redstone Arsenal, Alabama 35898-5248</s1>
<sZ>1 aut.</sZ>
</fA14>
<fA20><s1>4319-4326</s1>
</fA20>
<fA21><s1>1994-05-01</s1>
</fA21>
<fA23 i1="01"><s0>ENG</s0>
</fA23>
<fA43 i1="01"><s1>INIST</s1>
<s2>126</s2>
</fA43>
<fA44><s0>8100</s0>
<s1>© AIP</s1>
</fA44>
<fA47 i1="01" i2="1"><s0>94-0296670</s0>
</fA47>
<fA60><s1>P</s1>
</fA60>
<fA61><s0>A</s0>
</fA61>
<fA64 i1="01" i2="1"><s0>Journal of Applied Physics</s0>
</fA64>
<fA66 i1="01"><s0>USA</s0>
</fA66>
<fC01 i1="01" l="ENG"><s0>A method for nondestructive determination of free-electron concentration and mobility using Faraday rotation and absorption at mid-infrared wavelengths is presented. Faraday rotation measurements were made at four CO<sub>2</sub>
 laser wavelengths between 9 and 11 μm. The component due to free electrons was extracted using its wavelength dependence. Concentration N was determined for N>10<sup>14</sup>
 cm<sup>-3</sup>
 from calibration plots exploiting Faraday rotation's linear dependence on free electron concentration. Electron rotation was combined with absorption due to electrons to determine their mobility. These mobilities agreed reasonably well with Hall test mobilities in materials where electron absorption could be determined separately from hole absorption. In materials where hole and electron absorption cannot be determined separately, a reference mobility was calculated using an electron absorption cross section. Samples tested were Hg<sub>1-x</sub>
Cd<sub>x</sub>
Te for 0.20≤x≤0.30, n-type and intrinsic InSb, and n-type GaAs at room temperature.</s0>
</fC01>
<fC02 i1="01" i2="3"><s0>001B80A70D</s0>
</fC02>
<fC02 i1="02" i2="3"><s0>001B00G55</s0>
</fC02>
<fC02 i1="03" i2="3"><s0>001B00G60</s0>
</fC02>
<fC02 i1="04" i2="3"><s0>001B60A72S</s0>
</fC02>
<fC03 i1="01" i2="3" l="FRE"><s0>Méthode mesure</s0>
</fC03>
<fC03 i1="01" i2="3" l="ENG"><s0>Measuring methods</s0>
</fC03>
<fC03 i1="02" i2="3" l="FRE"><s0>8170D</s0>
<s2>PAC</s2>
<s4>INC</s4>
</fC03>
<fC03 i1="03" i2="3" l="FRE"><s0>0755</s0>
<s2>PAC</s2>
<s4>INC</s4>
</fC03>
<fC03 i1="04" i2="3" l="FRE"><s0>0760</s0>
<s2>PAC</s2>
<s4>INC</s4>
</fC03>
<fC03 i1="05" i2="3" l="FRE"><s0>6172S</s0>
<s2>PAC</s2>
<s4>INC</s4>
</fC03>
<fC03 i1="06" i2="3" l="FRE"><s0>Matériau semiconducteur</s0>
<s2>T1</s2>
</fC03>
<fC03 i1="06" i2="3" l="ENG"><s0>Semiconductor materials</s0>
<s2>T1</s2>
</fC03>
<fC03 i1="07" i2="3" l="FRE"><s0>Essai non destructif</s0>
<s2>Q1</s2>
<s2>T2</s2>
</fC03>
<fC03 i1="07" i2="3" l="ENG"><s0>Nondestructive testing</s0>
<s2>Q1</s2>
<s2>T2</s2>
</fC03>
<fC03 i1="08" i2="3" l="FRE"><s0>Mobilité électron</s0>
<s2>Q2</s2>
</fC03>
<fC03 i1="08" i2="3" l="ENG"><s0>Electron mobility</s0>
<s2>Q2</s2>
</fC03>
<fC03 i1="09" i2="X" l="FRE"><s0>Concentration</s0>
</fC03>
<fC03 i1="09" i2="X" l="ENG"><s0>Concentration</s0>
</fC03>
<fC03 i1="09" i2="X" l="SPA"><s0>Concentración</s0>
</fC03>
<fC03 i1="10" i2="3" l="FRE"><s0>Mercure tellurure</s0>
<s2>NK</s2>
</fC03>
<fC03 i1="10" i2="3" l="ENG"><s0>Mercury tellurides</s0>
<s2>NK</s2>
</fC03>
<fC03 i1="11" i2="3" l="FRE"><s0>Cadmium tellurure</s0>
<s2>NK</s2>
</fC03>
<fC03 i1="11" i2="3" l="ENG"><s0>Cadmium tellurides</s0>
<s2>NK</s2>
</fC03>
<fC03 i1="12" i2="3" l="FRE"><s0>Indium antimoniure</s0>
<s2>NK</s2>
</fC03>
<fC03 i1="12" i2="3" l="ENG"><s0>Indium antimonides</s0>
<s2>NK</s2>
</fC03>
<fC03 i1="13" i2="3" l="FRE"><s0>Gallium arséniure</s0>
<s2>NK</s2>
</fC03>
<fC03 i1="13" i2="3" l="ENG"><s0>Gallium arsenides</s0>
<s2>NK</s2>
</fC03>
<fC03 i1="14" i2="3" l="FRE"><s0>Effet Faraday</s0>
</fC03>
<fC03 i1="14" i2="3" l="ENG"><s0>Faraday effect</s0>
</fC03>
<fC03 i1="15" i2="3" l="FRE"><s0>Absorption</s0>
</fC03>
<fC03 i1="15" i2="3" l="ENG"><s0>Absorption</s0>
</fC03>
<fC03 i1="16" i2="3" l="FRE"><s0>Rayonnement laser</s0>
</fC03>
<fC03 i1="16" i2="3" l="ENG"><s0>Laser radiation</s0>
</fC03>
<fN21><s1>139</s1>
</fN21>
<fN47 i1="01" i2="1"><s0>9408M0423</s0>
</fN47>
</pA>
</standard>
</inist>
</record>

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Nondestructive determination of free-electron concentration and mobility in Hg1-xCdxTe, n-type InSb, and n-type GaAs

Nondestructive determination of free-electron concentration and mobility in Hg1-xCdxTe, n-type InSb, and n-type GaAs

Descripteurs français

English descriptors

Abstract

Links toward previous steps (curation, corpus...)

Links to Exploration step

Le document en format XML

Pour manipuler ce document sous Unix (Dilib)

Pour mettre un lien sur cette page dans le réseau Wicri